Prof. Michael S. Fuhrer

Professor in Physics BS 1990 University of Texas PhD 1998 University of California at Berkeley Fellow APS ARC Laureate Fellow Phone +61 (3) 9905 1353 Fax +61 (3) 9905 3637 Email:Michael.Fuhrer@monash.edu

RESEARCH INTERESTS

Prof. Fuhrer's research explores novel two-dimensional materials such as graphene, the two-dimensional surface state of three-dimensional topological insulators (e.g. Bi₂Se₃), and other two dimensional semiconductors, metals, and superconductors.

Selected publications

“Dual-gated bilayer graphene hot electron bolometer,” J. Yan, M.-H. Kim, J.A. Elle, A.B. Sushkov, G.S. Jenkins, H.M. Milchberg, M.S. Fuhrer, and H.D. Drew, Nature Nanotechnology 7, 472 (2012).
http://dx.doi.org/10.1038/nnano.2012.88

“Surface conduction of topological Dirac electrons in bulk insulating Bi₂Se₃,” Dohun Kim, Sungjae Cho, Nicholas P. Butch, Paul Syers, Kevin Kirshenbaum, Shaffique Adam, Johnpierre Paglione, Michael S. Fuhrer, Nature Physics 8, 460 (2012).
http://dx.doi.org/10.1038/nphys2286

“Tunable Kondo Effect in Graphene with Defects,” Jian-Hao Chen, Liang Li, W. G. Cullen, E. D. Williams, and M. S. Fuhrer, Nature Physics 7, 535 (2011).
http://dx.doi.org/10.1038/nphys1962

Jian-Hao Chen, W. G. Cullen, C. Jang, M. S. Fuhrer, E. D. Williams, “Defect scattering in graphene,” Physical Review Letters 102, 236805 (2009).
http://dx.doi.org/10.1103/PhysRevLett.102.236805

C. Jang, S. Adam, J.-H. Chen, E. D. Williams, S. Das Sarma, M. S. Fuhrer, “Tuning the effective fine structure constant in graphene: opposing effects of dielectric screening on short- and long-range potential scattering,” Physical Review Letters 101, 146805 (2008).
http://dx.doi.org/10.1103/PhysRevLett.101.146805

J. H. Chen, C. Jang, S. Xiao, M. Ishigami, M. S. Fuhrer, “Intrinsic and Extrinsic Performance Limits of Graphene Devices on SiO₂,” Nature Nanotechnology 3, 206 - 209 (2008).
http://dx.doi.org/10.1038/nnano.2008.58

J. H. Chen, C. Jang, S. Adam, M. S. Fuhrer, E. D. Williams, and M. Ishigami, “Charged Impurity Scattering in Graphene,” Nature Physics 4, 377 (2008).
http://dx.doi.org/10.1038/nphys935

Masa Ishigami, J. H. Chen, W. G. Cullen, M. S. Fuhrer, and E. D. Williams, “Atomic Structure of Graphene on SiO₂,” Nano Letters 7, 1643 (2007).
http://dx.doi.org/10.1021/nl070613a

Stephanie A. Getty, Chaiwat Engtrakul, Lixin Wang, Rui Liu, San-Huang Ke, Harold U. Baranger, Weitao Yang, Michael. S. Fuhrer, Lawrence R. Sita, “Near-perfect conduction through a ferrocene-based molecular wire,” Physical Review B Rapid Communications 71, 241401 (2005).
http://dx.doi.org/10.1103/PhysRevB.71.241401

T. Durkop, S. A. Getty, E. Cobas, M. S. Fuhrer, “Extraordinary Mobility in Semiconducting Carbon Nanotubes”, Nano Letters 4, 35-39 (2004).
http://dx.doi.org/10.1021/nl034841q

M. S. Fuhrer, B. M. Kim, T. Drkop, and T. Brintlinger, “High-Mobility Nanotube Transistor Memory”, Nano Letters 2, 755-759 (2002).
http://dx.doi.org/10.1021/nl025577o

P. L. McEuen, M. S. Fuhrer, H. Park, “Single-Walled Carbon Nanotube Electronics”, IEEE Transactions on Nanotechnology 1, 78-85 (2002).
http://dx.doi.org/10.1109/TNANO.2002.1005429

M. S. Fuhrer, J. Nygrd, L. Shih, M. Forero, Young-Gui Yoon, M. S. C. Mazzoni, Hyoung, Joon Choi, Jisoon Ihm, Steven G. Louie, A. Zettl and Paul L. McEuen, “Crossed nanotube junctions”, Science 288, 494-497 (2000).
http://dx.doi.org/10.1126/science.288.5465.494

A complete list of publications is available on Google Scholar
(http://scholar.google.com/citations?user=ZGW8T3wAAAAJ&hl=en)